2N7002BKM_15 Datasheet, PDF (2/16 Pages) NXP Semiconductors – 60 V, 450 mA N-channel Trench MOSFET

NXP Semiconductors
2. Pinning information
Table 2.
Pin
1
2
3
Pinning
Symbol
G
S
D
Description
gate
source
drain
2N7002BKM
60 V, 450 mA N-channel Trench MOSFET
Simplified outline Graphic symbol
1
D
3
2
Transparent
top view
G
S
017aaa000
3. Ordering information
Table 3. Ordering information
Type number Package
Name
Description
2N7002BKM SC-101
leadless ultra small plastic package; 3 solder lands;
body 1.0 × 0.6 × 0.5 mm
Version
SOT883
4. Marking
Table 4. Marking codes
Type number
2N7002BKM
Marking code
Z8
5. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
V_DS
drain-source voltage
T_amb = 25 °C
-
V_GS
gate-source voltage
T_amb = 25 °C
-
I_D
drain current
V_GS = 10 V
[1]
T_amb = 25 °C
-
T_amb = 100 °C
-
I_DM
peak drain current
T_amb = 25 °C;
-
single pulse; t_p ≤ 10 μs
Max Unit
60
V
±20
V
450
mA
220
mA
1.2
A
2N7002BKM
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 25 October 2010
© NXP B.V. 2010. All rights reserved.
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