1PS79SB62 Datasheet, PDF (2/8 Pages) NXP Semiconductors – Schottky barrier diode

Philips Semiconductors
Schottky barrier diode
Product specification
1PS79SB62
FEATURES
• Ultra high switching speed
• Very low capacitance
• High breakdown voltage
• Guard ring protected
• Ultra small plastic SMD package.
APPLICATIONS
• Ultra high-speed switching
• High frequency applications.
DESCRIPTION
Epitaxial Schottky barrier diode encapsulated in a
SOD523 (SC-79) ultra small plastic SMD package.
ESD sensitive device, observe handling precautions.
PINNING
PIN
1

²
1 handbook, halfpage k
Top view
Marking code: S9.
DESCRIPTION
cathode
anode
2a
MAM403
Fig.1 Simplified outline (SOD523; SC-79) and
symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
V_R
I_F
T_stg
T_j
T_amb
continuous reverse voltage
continuous forward current
storage temperature
junction temperature
operating ambient temperature
MIN.
−
−
−65
−
−65
MAX.
40
20
+150
125
+125
UNIT
V
mA
°C
°C
°C
2001 Jan 18
2