1PS79SB10 Datasheet, PDF (2/8 Pages) NXP Semiconductors – Schottky barrier diode

Philips Semiconductors
Schottky barrier diode
Product specification
1PS79SB10
FEATURES
• Low forward voltage
• Guard ring protected
• Ultra small plastic SMD package.
APPLICATIONS
• Ultra high-speed switching
• Voltage clamping
• Protection circuits
• Blocking diodes.
DESCRIPTION
Planar Schottky barrier diode encapsulated in a SC-79 ultra small plastic SMD

package.
handbook, halfpage k
a
Top view
MAM403
Marking code: F.
Fig.1 Simplified outline (SC-79) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
V_R
I_F
I_FRM
I_FSM
T_stg
T_j
T_amb
continuous reverse voltage
continuous forward current
repetitive peak forward current
non-repetitive peak forward current
storage temperature
junction temperature
operating ambient temperature
t_p ≤ 1 s; δ ≤ 0.5
t_p < 10 ms
MIN.
−
−
−
−
−65
−
−65
MAX.
30
200
300
600
+150
125
+125
UNIT
V
mA
mA
mA
°C
°C
°C
1998 Jul 16
2