1PS76SB62 Datasheet, PDF (2/8 Pages) NXP Semiconductors – Schottky barrier diode

Philips Semiconductors
Schottky barrier diode
Product specification
1PS76SB62
FEATURES
• Ultra high switching speed
• Very low capacitance
• High breakdown voltage
• Guard ring protected
• Two pin very small plastic SMD package.
APPLICATIONS
• Ultra high-speed switching
• High frequency applications.
DESCRIPTION
Epitaxial Schottky barrier diode encapsulated in a
SOD323 (SC-76) very small plastic SMD package.
ESD sensitive device, observe handling precautions.
PINNING
PIN
1
2
DESCRIPTION
cathode
anode
olumns
1
2
Marking code: S6.
MGU328
Fig.1 Simplified outline (SOD323; SC-76) and
symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
V_R
I_F
T_stg
T_j
T_amb
continuous reverse voltage
continuous forward current
storage temperature
junction temperature
operating ambient temperature
MIN.
−
−
−65
−
−65
MAX.
40
20
+150
125
+125
UNIT
V
mA
°C
°C
°C
ELECTRICAL CHARACTERISTICS
T_amb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
V_F
forward voltage
I_R
reverse current
C_d
diode capacitance
Note
1. Pulse test: pulse width = 300 µs; δ = 0.02.
CONDITIONS
I_F = 2 mA; see Fig.2; note 1
V_R = 40 V; see Fig.3; note 1
V_R = 0 V; f = 1 MHz; see Fig.4
MAX.
800
1
0.6
UNIT
mV
µA
pF
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
R_{th j-a}
thermal resistance from junction to ambient note 1
Note
1. Refer to SOD323 (SC-76) standard mounting conditions.
VALUE
450
UNIT
K/W
2001 Feb 16
2