1PS76SB40 Datasheet, PDF (2/8 Pages) NXP Semiconductors – Schottky barrier diode

Philips Semiconductors
Schottky barrier diode
Product specification
1PS76SB40
FEATURES
• Low forward voltage
• Guard ring protected
• Very small plastic SMD package
• Low diode capacitance.
APPLICATIONS
• Ultra high-speed switching
• Voltage clamping
• Protection circuits
• Blocking diodes.
DESCRIPTION
Planar Schottky barrier diode encapsulated in a SOD323 very small plastic
SMD package.
handbook, 4 columns
k
a
MAM283
Marking code: S4.
Fig.1 Simplified outline (SOD323) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
V_R
I_F
I_FRM
I_FSM
T_stg
T_j
T_amb
continuous reverse voltage
continuous forward current
repetitive peak forward current
non-repetitive peak forward current
storage temperature
junction temperature
operating ambient temperature
t_p ≤ 1 s; δ ≤ 0.5
t_p < 10 ms
MIN.
−
−
−
−
−65
−
−65
MAX.
40
120
120
200
+150
150
+150
UNIT
V
mA
mA
mA
°C
°C
°C
1999 Apr 26
2