BFU550W_15 Datasheet, PDF (16/22 Pages) NXP Semiconductors – NPN wideband silicon RF transistor

NXP Semiconductors
BFU550W
NPN wideband silicon RF transistor
10.1 Application example: 433 ISM band LNA
433 ISM band LNA, optimized for low noise.
More detailed information of the application example can be found in the application note:
AN11425.
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Fig 25. Schematic 433 MHz ISM band LNA
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Table 10. Application performance data at 433 MHz
I_CC = 20 mA; V_CC = 3.6 V
Symbol Parameter
Conditions
s₂₁²
NF
insertion power gain
noise figure
IP3_o
output third-order
f₁ = 433.1 MHz; f₂ = 433.2 MHz;
intercept point
P_i = 30 dBm per carrier
Min Typ Max Unit
- 19 -
dB
- 1.3 -
dB
- 19 -
dBm
BFU550W
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 13 January 2014
© NXP B.V. 2014. All rights reserved.
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