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BF1207 Datasheet, PDF (16/22 Pages) NXP Semiconductors – Dual N-channel dual gate MOSFET
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Philips Semiconductors
BF1207
Dual N-channel dual gate MOSFET
102
bis, gis
(mS)
10
1
10−1
001aac903
bis
gis
102
|yfs|
(mS)
10
001aac904 −102
|yfs|
ϕfs
(deg)
−10
ϕfs
10−2
10
102
103
f (MHz)
VDS(B) = 5 V; VG2-S = 4 V; VDS(A) = VG1-S(A) = 0 V;
ID(B) = 14 mA.
Fig 25. Amplifier B: input admittance as a function of
frequency; typical values
103
|yrs|
(µS)
102
001aac905 −103
ϕrs
(deg)
ϕrs
−102
1
−1
10
102
103
f (MHz)
VDS(B) = 5 V; VG2-S = 4 V; VDS(A) = VG1-S(A) = 0 V;
ID(B) = 14 mA.
Fig 26. Amplifier B: forward transfer admittance and
phase as a function of frequency; typical values
10
bos, gos
(mS)
1
001aac906
bos
|yrs|
gos
10
−10
10−1
1
−1
10−2
10
102
103
10
102
103
f (MHz)
f (MHz)
VDS(B) = 5 V; VG2-S = 4 V; VDS(A) = VG1-S(A) = 0 V;
ID(B) = 14 mA.
Fig 27. Amplifier B: reverse transfer admittance and
phase as a function of frequency; typical values
VDS(B) = 5 V; VG2-S = 4 V; VDS(A) = VG1-S(A) = 0 V;
ID(B) = 14 mA.
Fig 28. Amplifier B: output admittance as a function of
frequency; typical values
9397 750 14955
Product data sheet
Rev. 01 — 28 July 2005
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
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