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BF1210 Datasheet, PDF (13/21 Pages) NXP Semiconductors – Dual N-channel dual gate MOSFET
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NXP Semiconductors
BF1210
Dual N-channel dual gate MOSFET
160
IG1
(µA)
120
80
001aaf493
(1)
(2)
(3)
(4)
40
(5)
(6)
(7)
0
0
0.5
1.0
1.5
2.0
VG1-S (V)
(1) VG2-S = 4 V.
(2) VG2-S = 3.5 V.
(3) VG2-S = 3 V.
(4) VG2-S = 2.5 V.
(5) VG2-S = 2 V.
(6) VG2-S = 1.5 V.
(7) VG2-S = 1 V.
VDS(B) = 5 V; Tj = 25 °C.
Fig 19. Amplifier B: gate1 current as a function of
gate1 voltage; typical values
24
ID
(mA)
16
001aaf495
8
48
Yfs
(mS)
36
24
001aaf494
(1)
(2)
(3)
12
(6)
(7)
0
0
12
(4)
(5)
24
36
48
ID (mA)
(1) VG2-S = 4 V.
(2) VG2-S = 3.5 V.
(3) VG2-S = 3 V.
(4) VG2-S = 2.5 V.
(5) VG2-S = 2 V.
(6) VG2-S = 1.5 V.
(7) VG2-S = 1 V.
VDS(B) = 5 V; Tj = 25 °C.
Fig 20. Amplifier B: forward transfer admittance as a
function of drain current; typical values
16
ID
(mA)
12
001aaf496
8
4
0
0
10
20
30
40
50
IG1 (µA)
0
0
1
2
3
4
5
VGG (V)
VDS(B) = 5 V; VG2-S = 4 V; Tj = 25 °C.
Fig 21. Amplifier B: drain current as a function of gate1
current; typical values
VDS(B) = 5 V; VG2-S = 4 V; RG1(B) = 150 kΩ;
Tj = 25 °C.
Fig 22. Amplifier B: drain voltage as a function of gate1
supply voltage (VGG); typical values
BF1210_1
Product data sheet
Rev. 01 — 25 October 2006
© NXP B.V. 2006. All rights reserved.
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