BCP68_15 Datasheet, PDF(13/23 Page) Guangdong Kexin Industrial Co.,Ltd

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BCP68_15 Datasheet, PDF (13/23 Pages) Guangdong Kexin Industrial Co.,Ltd – NPN Transistors

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NXP Semiconductors

BCP68; BC868; BC68PA

20 V, 2 A NPN medium power transistors

7. Characteristics

Table 8. Characteristics

Tamb = 25 ï°C unless otherwise specified.

Symbol Parameter

Conditions

Min Typ Max Unit

ICBO

collector-base cut-off VCB = 25 V; IE = 0 A

current

VCB = 25 V; IE = 0 A;

Tj = 150 ï°C

IEBO

emitter-base cut-off VEB = 5 V; IC = 0 A

current

100 nA

10 ïA

100 nA

hFE

VCEsat

VBE

DC current gain

VCE = 10 V

IC = 5 mA

50 -

DC current gain

VCE = 1 V

IC = 500 mA

[1] 85

IC = 1 A

[1] 60

IC = 2 A

[1] 40

DC current gain

VCE = 1 V

hFE selection -25

IC = 500 mA

[1] 160 -

collector-emitter

IC = 1 A; IB = 100 mA

[1] -

saturation voltage

IC = 2 A; IB = 200 mA

[1] -

base-emitter voltage VCE = 10 V; IC = 5 mA

[1] -

VCE = 1 V; IC = 1 A

[1] -

collector capacitance VCB = 10 V; IE = ie = 0 A;

f = 1 MHz

375

0.5 V

0.6 V

0.7 V

transition frequency VCE = 5 V; IC = 50 mA;

40 170 -

MHz

f = 100 MHz

[1] Pulse test: tp ï£ 300 ïs; ï¤ = 0.02.

BCP68_BC868_BC68PA

Product data sheet

All information provided in this document is subject to legal disclaimers.

Rev. 8 â 18 October 2011

13 of 23

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