PMDT290UNE_15 Datasheet, PDF (12/16 Pages) NXP Semiconductors – 20 V, 800 mA dual N-channel Trench MOSFET

NXP Semiconductors
10. Soldering
PMDT290UNE
20 V, 800 mA dual N-channel Trench MOSFET
2.75
2.45
2.1
1.6
0.538
2 1.7 1.075
0.55
(2×)
1.7
0.45
(4×)
0.5
(4×)
Fig 19. Reflow soldering footprint for SOT666
0.4
(6×) ^{0.25 0.3}
(2×) (2×)
solder lands
placement area
solder paste
0.6
(2×)
0.65
(2×)
0.325 0.375
(4×) (4×)
occupied area
Dimensions in mm
sot666_fr
PMDT290UNE
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 13 September 2011
© NXP B.V. 2011. All rights reserved.
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