BF1203 Datasheet, PDF (12/20 Pages) NXP Semiconductors – Dual N-channel dual gate MOS-FET

Philips Semiconductors
Dual N-channel dual gate MOS-FET
Product specification
BF1203
20
handbook, halfpage
ID
(mA)
16
12
8
VG2-S = 4 V
3.5 V
3V
MCD952
2.5 V
2V
1.5 V
4
1V
0
0
0.4
0.8
1.2
1.6
2
VG1-S (V)
Amplifier b
V_DS = 5 V.
T_j = 25 °C.
Fig.19 Transfer characteristics; typical values.
24
handbook, halfpage
ID
(mA)
16
8
MCD953
VG1-S = 1.5 V
1.4 V
1.3 V
1.2 V
1.1 V
1V
0.9 V
0
0
2
4
6
8
10
VDS (V)
Amplifier b
V_G2-S = 4 V.
T_j = 25 °C.
Fig.20 Output characteristics; typical values.
100
handbook, halfpage
IG1
(µA)
80
VG2-S = 4 V
MCD954
3.5 V
3V
60
2.5 V
40
2V
20
0
0
0.5
Amplifier b
V_DDSS = 5 V.
T_jj = 25 °C.
1
1.5
1.5 V
1V
2
2.5
VG1-S (V)
Fig.21 Gate 1 current as a function of gate 1
voltage; typical values.
2001 Apr 25
handbook,⁴h⁰alfpage
yfs
(mS)
30
MCD955
3.5 V
VG2-S = 4 V
3V
20
2.5 V
10
2V
0
0
4
8
12
16
20
ID (mA)
Amplifier b
V_DS = 5 V.
T_j = 25 °C.
Fig.22 Forward transfer admittance as a function
of drain current; typical values.
12