PBSS4160PANP_15 Datasheet, PDF (11/21 Pages) NXP Semiconductors – 60 V, 1 A NPN/PNP low VCEsat (BISS) transistor

NXP Semiconductors
PBSS4160PANP
60 V, 1 A NPN/PNP low VCEsat (BISS) transistor
Symbol
V_BEon
t_d
t_r
t_on
t_s
t_f
t_off
f_T
C_c
800
h_FE
600
400
200
Parameter
base-emitter turn-on
voltage
delay time
rise time
turn-on time
storage time
fall time
turn-off time
transition frequency
collector capacitance
Conditions
I_C = -1 A; I_B = -50 mA; pulsed;
t_p ≤ 300 µs; δ ≤ 0.02 ; T_amb = 25 °C
I_C = -1 A; I_B = -100 mA; pulsed;
t_p ≤ 300 µs; δ ≤ 0.02 ; T_amb = 25 °C
V_CE = -2 V; I_C = -0.5 A; pulsed;
t_p ≤ 300 µs; δ ≤ 0.02 ; T_amb = 25 °C
V_CC = -10 V; I_C = -0.5 A; I_Bon = -25 mA;
I_Boff = 25 mA; T_amb = 25 °C
V_CE = -10 V; I_C = -50 mA; f = 100 MHz;
T_amb = 25 °C
V_CB = -10 V; I_E = 0 A; i_e = 0 A;
f = 1 MHz; T_amb = 25 °C
Min Typ Max Unit
-
-
-1
V
-
-
-1.1 V
-
-
-0.9 V
-
15
-
-
40
-
-
55
-
-
95
-
-
40
-
-
135 -
65
125 -
ns
ns
ns
ns
ns
ns
MHz
-
9.5 13
pF
006aad204
1.50
006aad205
I_C
I_B = 15 mA 13.5 12 10.5
(A)
(1)
1.00
9
7.5
(2)
6
0.75
4.5
3
0.50
(3)
1.5
0.25
0
10^-1
1
10
10²
10³
10⁴
I_C (mA)
V_CE = 2 V
(1) T_amb = 100 °C
(2) T_amb = 25 °C
(3) T_amb = −55 °C
Fig. 10. TR1 (NPN): DC current gain as a function of
collector current; typical values
0
0
1
2
3
4
5
V_CE (V)
T_amb = 25 °C
Fig. 11. TR1 (NPN): Collector current as a function of
collector-emitter voltage; typical values
PBSS4160PANP
Product data sheet
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14 January 2013
© NXP B.V. 2013. All rights reserved
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