PBSS4130PAN_15 Datasheet, PDF (11/17 Pages) NXP Semiconductors – 30 V, 1 A NPN/NPN low VCEsat (BISS) transistor

NXP Semiconductors
PBSS4130PAN
30 V, 1 A NPN/NPN low VCEsat (BISS) transistor
1.2
V_BE
(V)
(1)
0.8
(2)
(3)
0.4
006aad174
1.2
V_BEsat
(V)
1.0
0.8
0.6
0.4
006aad175
(1)
(2)
(3)
0
10^-1
1
10
10²
10³
10⁴
I_C (mA)
V_CE = 2 V
(1) T_amb = −55 °C
(2) T_amb = 25 °C
(3) T_amb = 100 °C
Fig. 12. Base-emitter voltage as a function of collector
current; typical values
1
006aad176
0.2
10^-1
1
10
10²
10³
10⁴
I_C (mA)
I_C/I_B = 20
(1) T_amb = −55 °C
(2) T_amb = 25 °C
(3) T_amb= 100 °C
Fig. 13. Base-emitter saturation voltage as a function of
collector current; typical values
1
006aad177
V_CEsat
(V)
V_CEsat
(V)
10^-1
10^-1
(1)
(2)
10^-2
(3)
(1)
(2)
10^-2
(3)
10^-3
10^-1
1
10
10²
10³
10⁴
I_C (mA)
I_C/I_B = 20
(1) T_amb = 100 °C
(2) T_amb = 25 °C
(3) T_amb = −55 °C
Fig. 14. Collector-emitter saturation voltage as a
function of collector current; typical values
10^-3
10^-1
1
10
10²
10³
10⁴
I_C (mA)
T_amb = 25 °C
(1) I_C/I_B = 100
(2) I_C/I_B = 50
(3) I_C/I_B = 10
Fig. 15. Collector-emitter saturation voltage as a
function of collector current; typical values
PBSS4130PAN
Product data sheet
All information provided in this document is subject to legal disclaimers.
11 January 2013
© NXP B.V. 2013. All rights reserved
11 / 17