BUK201-50Y Datasheet, PDF (11/13 Pages) NXP Semiconductors – PowerMOS transistor TOPFET high side switch

Philips Semiconductors
PowerMOS transistor
TOPFET high side switch
Product specification
BUK201-50Y
IL / A
60
BUK201-50Y
50
typ.
40
30
20
10
0
-50
0
50
100
150
200
Tmb / C
Fig.34. Typical overload current, V_BL = 9 V.
I_L = f(T_mb); conditions V_BG = 13 V; t_p = 300 µs
VBL(TO) / V
12
BUK201-50Y
11
10
9
8
0
10
20
30
40
VBG / V
Fig.35. Typical short circuit load threshold voltage.
V_BL(TO) = f(V_BG); condition T_mb = 25 ˚C
VBL(TO) / V
15
BUK201-50Y
14
13
12
11
10
9
8
7
6
5
-60
-20
20
60
100
140
180
Tmb / C
Fig.36. Typical short circuit load threshold voltage.
V_BL(TO) = f(T_mb); condition V_BG = 13 V
Zth j-mb / (K/W)
10
BUK201-50Y
D=
1
0.5
0.2
0.1
0.1 _0.05
0.02
P_D
tp
D
=
tp
T
0
0.01
T
t
100n 1u 10u 100u 1m 10m 100m 1
10
t/s
Fig.37. Transient thermal impedance.
Z_{th j-mb} = f(t); parameter D = t_p/T
July 1996
11
Rev 1.000