BLP05H6350XR_15 Datasheet, PDF (11/14 Pages) NXP Semiconductors – Power LDMOS transistor

NXP Semiconductors
BLP05H6350XR
Power LDMOS transistor
9. Handling information
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling
electrostatic sensitive devices.
Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or
equivalent standards.
10. Abbreviations
Table 12. Abbreviations
Acronym
Description
CW
Continuous Wave
ESD
ElectroStatic Discharge
HF
High Frequency
LDMOS
Laterally Diffused Metal-Oxide Semiconductor
MTF
Median Time to Failure
SMD
Surface Mounted Device
UIS
Unclamped Inductive Switching
VSWR
Voltage Standing-Wave Ratio
11. Revision history
Table 13. Revision history
Document ID
BLP05H6350XR v.1
Release date Data sheet status Change notice
20150703
Preliminary data sheet -
Supersedes
-
BLP05H6350XR
Preliminary data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 3 July 2015
© NXP Semiconductors N.V. 2015. All rights reserved.
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