TDA8939TH Datasheet, PDF (10/21 Pages) NXP Semiconductors – Zero dead time Class-D 7.5 A power comparator

Philips Semiconductors
TDA8939
Zero dead time Class-D 7.5 A power comparator
Table 10: Static characteristics …continued
V_P = ±25 V; f_carrier = 384 kHz; T_amb = 25 °C; unless otherwise specified.
Symbol Parameter
Conditions
Temperature protection
T_diag
diagnostic trigger temperature
Overcurrent protection
V_DIAGN = V_OL
I_prot
diagnostic and protection trigger V_DIAGN = V_OL
current
Overvoltage protection
V_DD(max)
diagnostic and protection trigger V_DIAGN = V_OL
maximum supply voltage
Min
Typ Max
Unit
150
-
-
°C
7.5
-
-
A
±30
±33 -
V
[1] When the supply voltage is below ±12.5 V the PWM outputs will not be able to switch to the high side at the first PWM cycle.
[2] OTP, OCP and/or OVP protection activated.
12. Dynamic characteristics
Table 11: Dynamic characteristics
V_P = ±25 V; T_amb = 25 °C; f_carrier = 384 kHz; see also Figure 8 for definitions.
Symbol Parameter
Conditions
Min
PWM output
t_r
rise time output voltage
-
t_f
fall time output voltage
-
t_dead
dead time
-
t_r(LH)
large signal response time
input amplitude = 3.3 V
-
LOW-to-HIGH transition at
output
t_r(HL)
large signal response time
input amplitude = 3.3 V
-
HIGH-to-LOW transition at
output
t_W(min)
R_{DS_ON}
η
minimal pulse width
R_{DS_ON} output transistors
efficiency
P_o = P_rated
-
-
[1] _-
Typ Max
20
-
20
-
0
-
90
-
90
-
150 -
0.2
0.3
-
90
Unit
ns
ns
ns
ns
ns
ns
Ω
-
[1] Output power measured across the loudspeaker load. Power measurement based on indirect measurement by measuring the R_{DS_ON}.
9397 750 13023
Objective data sheet
Rev. 01 — 22 April 2004
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
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