BUK200-50Y Datasheet, PDF (10/13 Pages) NXP Semiconductors – PowerMOS transistor TOPFET high side switch

Philips Semiconductors
PowerMOS transistor
TOPFET high side switch
Product specification
BUK200-50Y
VLG / V
-10
-12
-14
IL =
1 mA
BUK200-50Y
-16
5A
-18
tp = 300 us
-20
-22
-60
-20
20
60
100
140
180
Tj / C
Fig.28. Typical negative load clamping voltage.
V_LG = f(T_j); parameter I_L; condition V_IG = 0 V.
VBL / V
65
60
55
tp = 300 us
BUK200-50Y
IL =
2.5 A
1 mA
100 uA
50
-60
-20
20
60
100
140
180
Tj / C
Fig.29. Typical battery to load clamping voltage.
V_BL = f(T_j); parameter I_L; condition I_G = 5 mA.
IG / mA
0
BUK200-50Y
-50
-100
-150
-20
-15
-10
-5
0
VBG / V
Fig.30. Typical reverse battery characteristic.
I_G = f(V_BG); conditions I_L = 0 A, T_j = 25 ˚C
IL / A
0
BUK200-50Y
-5
-10
-15
-20
-1.1
-0.9
-0.7
-0.5
-0.3
-0.1
VBL / V
Fig.31. Typical reverse diode characteristic.
I_L = f(V_BL); conditions V_IG = 0 V, T_j = 25 ˚C
Cbl / pF
1000
BUK200-50Y
100
0
10
20
30
40
50
VBL / V
Fig.32. Typical output capacitance. T_mb = 25 ˚C
C_bl = f(V_BL); conditions f = 1 MHz, V_IG = 0 V
IL / A
50
40
VBL(TO) typ.
30 ^{tp =}
300 us
20
BUK200-50Y
current limiting
50 us
i.e. before short
circuit load trip
10
0
0 2 4 6 8 10 12 14 16 18 20
VBL / V
Fig.33. Typical overload characteristic, T_mb = 25 ˚C.
I_L = f(V_BL); condition V_BG = 13 V; parameter t_p
April 1995
10
Rev 1.000