BLF7G22L-200_15 Datasheet, PDF (10/13 Pages) NXP Semiconductors – Power LDMOS transistor

NXP Semiconductors
BLF7G22L-200; BLF7G22LS-200
Power LDMOS transistor
9. Handling information
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling
electrostatic sensitive devices.
Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or
equivalent standards.
10. Abbreviations
Table 10. Abbreviations
Acronym
Description
3GPP
Third Generation Partnership Project
CCDF
Complementary Cumulative Distribution Function
CW
Continuous Wave
DPCH
Dedicated Physical CHannel
LDMOS
Laterally Diffused Metal Oxide Semiconductor
LDMOST
Laterally Diffused Metal Oxide Semiconductor Transistor
PAR
Peak-to-Average power Ratio
RF
Radio Frequency
VSWR
Voltage Standing Wave Ratio
W-CDMA
Wideband Code Division Multiple Access
11. Revision history
Table 11. Revision history
Document ID
Release date Data sheet status Change notice Supersedes
BLF7G22L-200_7G22LS-200 v.4 20110722 Product data sheet -
BLF7G22L-200_7G22LS-200
v.3
Modifications:
• The status of this document has been changed to Product data sheet.
BLF7G22L-200_7G22LS-200 v.3 20110401 Preliminary data sheet -
BLF7G22L-200_7G22LS-200
v.2
BLF7G22L-200_7G22LS-200 v.2 20101228 Preliminary data sheet -
BLF7G22L-200_7G22LS-200
v.1
BLF7G22L-200_7G22LS-200 v.1 20100419 Objective data sheet -
-
BLF7G22L-200_7G22LS-200
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 4 — 22 July 2011
© NXP B.V. 2011. All rights reserved.
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