TB100_15 Datasheet, PDF (1/10 Pages) NXP Semiconductors – NPN power transistor

TB100
NPN power transistor
19 December 2013
Product data sheet
1. General description
High voltage, high speed, planar passivated NPN power switching transistor in a SOT54
(TO92) plastic package intended for use in low power SMPS emitter switching circuits.
2. Features and benefits
• Fast switching
• High base current drive capability
• High voltage capability
• Very low switching and conduction losses
3. Applications
• Emitter-switched low power SMPS circuits
• Self Oscillating Power Supplies
• AC-DC converters
• DC-AC inverters
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
I_C
collector current
DC
P_tot
total power dissipation T_lead ≤ 25 °C; Fig. 1
T_j
junction temperature
V_CESM
collector-emitter peak V_BE = 0 V
voltage
Static characteristics
h_FE
DC current gain
V_CE = 5 V; I_C = 10 mA; T_lead = 25 °C;
Fig. 5; Fig. 6
V_CE = 5 V; I_C = 100 mA; T_lead = 25 °C;
Fig. 5; Fig. 6
V_CE = 5 V; I_C = 0.75 A; T_lead = 25 °C;
Fig. 5; Fig. 6
Min Typ Max Unit
-
-
1
A
-
-
2
W
-
-
150 °C
-
-
700 V
12
22
32
14
24
34
12
15.5 20
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