SI2304DS Datasheet, PDF (1/12 Pages) NXP Semiconductors – N-channel enhancement mode field-effect transistor

SI2304DS
N-channel enhancement mode field-effect transistor
Rev. 01 — 17 August 2001
M3D088
Product data
1. Description
N-channel enhancement mode field-effect transistor in a plastic package using
TrenchMOS™¹ technology
Product availability:
SI2304DS in SOT23.
2. Features
s TrenchMOS™ technology
s Very fast switching
s Subminiature surface mount package.
3. Applications
s Battery management
s High speed switch
s Low power DC to DC converter.
4. Pinning information
Table 1:
Pin
1
2
3
Pinning - SOT23, simplified outline and symbol
Description
Simplified outline
gate (g)
3
source (s)
drain (d)
1
2
Top view
MSB003
SOT23
Symbol
d
g
MBB076
s
1. TrenchMOS is a trademark of Koninklijke Philips Electronics N.V.