SI2302DS Datasheet, PDF (1/12 Pages) NXP Semiconductors – N-channel enhancement mode field-effect transistor

SI2302DS
N-channel enhancement mode field-effect transistor
Rev. 02 — 20 November 2001
M3D088
Product data
1. Description
N-channel enhancement mode field-effect transistor in a plastic package using
TrenchMOS™¹ technology.
Product availability:
SI2302DS in SOT23.
2. Features
s TrenchMOS™ technology
s Very fast switching
s Logic level compatible
s Subminiature surface mount package.
3. Applications
s Battery management
s High speed switch
s Low power DC to DC converter.
4. Pinning information
Table 1: Pinning - SOT23, simplified outline and symbol
Pin
Description
Simplified outline
1
gate (g)
3
2
source (s)
3
drain (d)
1
2
Top view
MSB003
SOT23
Symbol
d
g
MBB076
s
1. TrenchMOS is a trademark of Koninklijke Philips Electronics N.V.