RB520CS30L_15 Datasheet, PDF (1/14 Pages) NXP Semiconductors – 100 mA low VF MEGA Schottky barrier rectifier

RB520CS30L
100 mA low V_F MEGA Schottky barrier rectifier
Rev. 1 — 10 March 2011
Product data sheet
1. Product profile
1.1 General description
Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an
integrated guard ring for stress protection, encapsulated in a SOD882 leadless ultra small
Surface-Mounted Device (SMD) plastic package.
1.2 Features and benefits
„ Average forward current: I_F(AV) ≤ 100 mA
„ Reverse voltage: V_R ≤ 30 V
„ Low forward voltage: V_F ≤ 450 mV
„ Low reverse current: I_R ≤ 0.5 μA
„ AEC-Q101 qualified
„ Leadless ultra small SMD plastic package
1.3 Applications
„ Low current rectification
„ High efficiency DC-to-DC conversion
„ Switch Mode Power Supply (SMPS)
„ Reverse polarity protection
„ Low power consumption applications
1.4 Quick reference data
Table 1.
Symbol
I_F(AV)
Quick reference data
Parameter
average forward current
I_R
reverse current
V_R
reverse voltage
V_F
forward voltage
Conditions
square wave;
δ = 0.5; f = 20 kHz
T_amb ≤ 135 °C
T_sp ≤ 145 °C
V_R = 10 V
I_F = 10 mA
Min Typ Max Unit
[1] _-
-
100 mA
-
-
100 mA
-
0.14 0.5 μA
-
-
30 V
[2] _-
330 450 mV
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
cathode 1 cm².
[2] Pulse test: t_p ≤ 300 μs; δ ≤ 0.02.