PUSB3FR6_15 Datasheet, PDF (1/12 Pages) NXP Semiconductors – ESD protection for ultra high-speed interfaces

PUSB3FR6
ESD protection for ultra high-speed interfaces
Rev. 1 — 25 February 2015
Product data sheet
1. Product profile
1.1 General description
The device is designed to protect high-speed interfaces such as SuperSpeed and
Hi-Speed USB combination, SD-memory card 3.0 and thunderbolt interfaces against
ElectroStatic Discharge (ESD).
The device includes six high-level ESD protection diode structures for ultra high-speed
signal lines. The device is encapsulated in a leadless ultra small DFN2111-7 (SOT1358-1)
Surface-Mounted Device (SMD) plastic package.
All signal lines are protected by a special diode structure offering ultra low line
capacitance of only 0.35 pF. These diodes utilize a snap-back structure in order to provide
protection to downstream components from ESD voltages up to 15 kV contact exceeding
IEC 61000-4-2, level 4.
1.2 Features and benefits
 System-level ESD protection for USB 2.0 and USB 3.1 combination, SD-memory card
and thunderbolt interfaces
 Supports SuperSpeed USB 3.1 at 10 Gbps
 All signal lines with integrated rail-to-rail clamping diodes for downstream
ESD protection of 15 kV exceeding IEC 61000-4-2, level 4
 Matched 0.5 mm trace spacing
 Line capacitance of only 0.35 pF for each channel
 Design-friendly ‘pass-through’ signal routing
1.3 Applications
The device is designed for high-speed receiver and transmitter port protection:
 Portable and wearable devices
 Smartphones and tablet PCs
 TVs and monitors
 DVD recorders and players
 Notebooks, main board graphic cards and ports
 Set-top boxes and game consoles