PUSB3AB6_15 Datasheet, PDF (1/12 Pages) NXP Semiconductors – ESD protection for ultra high-speed interfaces

PUSB3AB6
ESD protection for ultra high-speed interfaces
Rev. 1 — 3 March 2015
Product data sheet
1. Product profile
1.1 General description
The device is designed to protect high-speed interfaces such as SuperSpeed and
Hi-Speed USB combination, Secure Digital (SD) card 3.0 and Thunderbolt interfaces
against ElectroStatic Discharge (ESD).
The device includes six high-level ESD protection diode structures. They protect sensitive
transmitters and receivers for ultra high-speed signal lines. The device is encapsulated in
a leadless ultra small DFN2111-7 (SOT1358-1) Surface-Mounted Device (SMD) plastic
package.
All signal lines are protected by a special diode configuration offering snapback ultra low
line capacitance of only 0.15 pF. These diodes utilize a snapback structure in order to
provide protection to downstream components from ESD voltages up to 15 kV contact
exceeding IEC 61000-4-2, level 4.
1.2 Features and benefits
 System-level ESD protection for USB 2.0 and USB 3.1 combination, SD card 3.0 and
Thunderbolt interfaces
 Supports SuperSpeed USB 3.1 at 10 Gbps
 Line capacitance of only 0.15 pF for each channel
 All signal lines with integrated rail-to-rail clamping diodes for downstream
ESD protection of 15 kV exceeding IEC 61000-4-2, level 4
 Matched 0.5 mm trace spacing
 Design-friendly pass-through signal routing
1.3 Applications
The device is designed for high-speed receiver and transmitter port protection:
 Portable and wearable devices
 Smartphones, tablet computers
 TVs and monitors
 DVD recorders and players
 Notebooks, main board graphic cards and ports
 Set-top boxes and game consoles