|
PSMN1R1-25YLC_15 Datasheet, PDF (1/15 Pages) NXP Semiconductors – N-channel 25 V 1.15 mΩ logic level MOSFET in LFPAK using | |||
|
PSMN1R1-25YLC
N-channel 25 V 1.15 m⦠logic level MOSFET in LFPAK using
NextPower technology
Rev. 1 â 2 May 2011
Product data sheet
1. Product profile
1.1 General description
Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is
designed and qualified for use in a wide range of industrial, communications and domestic
equipment.
1.2 Features and benefits
 High reliability Power SO8 package,
qualified to 175°C
 Optimised for 4.5V Gate drive utilising
NextPower Superjunction technology
 Ultra low QG, QGD and QOSS for high
system efficiencies at low and high
loads
 Ultra low Rdson and low parasitic
inductance
1.3 Applications
 DC-to-DC converters
 Lithium-ion battery protection
 Load switching
 Power OR-ing
 Server power supplies
 Sync rectifier
1.4 Quick reference data
Table 1.
Symbol
VDS
ID
Quick reference data
Parameter
drain-source voltage
drain current
Ptot
total power dissipation
Tj
junction temperature
Static characteristics
RDSon
drain-source on-state
resistance
Conditions
25 °C ⤠Tj ⤠175 °C
Tmb = 25 °C; VGS = 10 V;
see Figure 1
Tmb = 25 °C; see Figure 2
VGS = 4.5 V; ID = 25 A;
Tj = 25 °C;
see Figure 12
VGS = 10 V; ID = 25 A;
Tj = 25 °C;
see Figure 12
Min
-
[1] -
-
-55
-
-
Typ Max Unit
-
25 V
-
100 A
-
215 W
-
175 °C
1.2 1.5 mâ¦
0.95 1.15 mâ¦
|
▷ |