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PSMN030-150B Datasheet, PDF (1/9 Pages) NXP Semiconductors – N-channel TrenchMOS transistor | |||
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Philips Semiconductors
Product specification
N-channel TrenchMOSï transistor
PSMN030-150B
FEATURES
⢠âTrenchâ technology
⢠Very low on-state resistance
⢠Fast switching
⢠Low thermal resistance
SYMBOL
d
g
s
QUICK REFERENCE DATA
VDSS = 150 V
ID = 55.5 A
RDS(ON) ⤠30 mâ¦
GENERAL DESCRIPTION
SiliconMAX products use the latest Philips Trench technology to achieve the lowest possible on-state resistance in
each package at each voltage rating.
Applications:-
⢠d.c. to d.c. converters
⢠switched mode power supplies
The PSMN030-150B is supplied in the SOT404 (D2PAK) Surface mounted package.
PINNING - SOT404
PIN
DESCRIPTION
1 gate
PIN CONFIGURATION
mb
SYMBOL
d
2 drain
(no connection possible)
3 source
mb drain
2
13
g
s
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
VDSS
VDGR
VGS
ID
IDM
PD
Tj, Tstg
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Continuous drain current
Pulsed drain current
Total power dissipation
Operating junction and
storage temperature
Tj = 25 ËC to 175ËC
Tj = 25 ËC to 175ËC; RGS = 20 kâ¦
Tmb = 25 ËC
Tmb = 100 ËC
Tmb = 25 ËC
Tmb = 25 ËC
MIN.
-
-
-
-
-
-
-
- 55
MAX.
150
150
± 20
55.5
39
222
250
175
UNIT
V
V
V
A
A
A
W
ËC
December 2000
1
Rev 1.000
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