PMZB600UNE_15 Datasheet, PDF (1/14 Pages) NXP Semiconductors – 20 V, N-channel Trench MOSFET

PMZB600UNE
20 V, N-channel Trench MOSFET
21 July 2014
Product data sheet
1. General description
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small
DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench
MOSFET technology.
2. Features and benefits
• Trench MOSFET technology
• Leadless ultra small SMD plastic package: 1.0 × 0.6 × 0.37 mm
• ElectroStatic Discharge (ESD) protection > 1 kV HBM
• Drain-source on-state resistance R_DSon = 470 mΩ
3. Applications
• Relay driver
• High-speed line driver
• Low-side load switch
• Switching circuits
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
V_DS
drain-source voltage
V_GS
gate-source voltage
I_D
drain current
Static characteristics
R_DSon
drain-source on-state
resistance
Conditions
T_j = 25 °C
V_GS = 4.5 V; T_amb = 25 °C
V_GS = 4.5 V; I_D = 0.6 A; T_j = 25 °C
Min Typ Max Unit
-
-
20
V
-8
-
8
V
[1]
-
-
0.6 A
-
470 620 mΩ
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
drain 1 cm².
Scan or click this QR code to view the latest information for this product