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PMZB390UNE_15 Datasheet, PDF (1/14 Pages) NXP Semiconductors – 30 V, N-channel Trench MOSFET | |||
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PMZB390UNE
30 V, N-channel Trench MOSFET
12 March 2015
Product data sheet
1. General description
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small
DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench
MOSFET technology.
2. Features and benefits
⢠Very fast switching
⢠Low threshold voltage
⢠Trench MOSFET technology
⢠ElectroStatic Discharge (ESD) protection: 2 kV HBM
⢠Ultra thin package profile of 0.37 mm
3. Applications
⢠Relay driver
⢠High-speed line driver
⢠Low-side loadswitch
⢠Switching circuits
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
VDS
drain-source voltage
VGS
gate-source voltage
ID
drain current
Static characteristics
RDSon
drain-source on-state
resistance
Conditions
Tj = 25 °C
VGS = 4.5 V; Tamb = 25 °C
VGS = 4.5 V; ID = 0.9 A; Tj = 25 °C
Min Typ Max Unit
-
-
30
V
-8
-
8
V
[1]
-
-
0.9 A
-
390 470 mΩ
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2.
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