PMZB370UNE_15 Datasheet, PDF (1/15 Pages) NXP Semiconductors – 30 V, single N-channel Trench MOSFET

PMZB370UNE
30 V, single N-channel Trench MOSFET
Rev. 1 — 8 May 2012
Product data sheet
1. Product profile
1.1 General description
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small
DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench
MOSFET technology.
1.2 Features and benefits
 Very fast switching
 Trench MOSFET technology
 Low threshold voltage
 Ultra thin package profile with
0.37 mm height
 ESD protection up to 2 kV
1.3 Applications
 Relay driver
 High-speed line driver
 Low-side loadswitch
 Switching circuits
1.4 Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
V_DS
drain-source voltage T_j = 25 °C
V_GS
gate-source voltage
I_D
drain current
V_GS = 4.5 V; T_amb = 25 °C
[1]
Static characteristics
R_DSon
drain-source on-state V_GS = 4.5 V; I_D = 500 mA; T_j = 25 °C
resistance
Min Typ Max Unit
-
-
30 V
-8
-
8
V
-
-
900 mA
-
370 490 mΩ
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 1 cm².