PMXB350UPE_15 Datasheet, PDF (1/15 Pages) NXP Semiconductors – 20 V, P-channel Trench MOSFET

PMXB350UPE
20 V, P-channel Trench MOSFET
24 January 2014
Product data sheet
1. General description
P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small
DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench
MOSFET technology.
2. Features and benefits
• Trench MOSFET technology
• Leadless ultra small and ultra thin SMD plastic package: 1.1 × 1.0 × 0.37 mm
• Exposed drain pad for excellent thermal conduction
• ElectroStatic Discharge (ESD) protection 1 kV HBM
• Drain-source on-state resistance R_DSon = 350 mΩ
3. Applications
• High-side load switch and charging switch for portable devices
• Power management in battery driven portables
• LED driver
• DC-to-DC converter
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
Min Typ Max Unit
V_DS
drain-source voltage T_j = 25 °C
-
-
-20 V
V_GS
gate-source voltage
-8
-
8
V
I_D
drain current
V_GS = -4.5 V; T_amb = 25 °C
[1]
-
-
-1.2 A
Static characteristics
R_DSon
drain-source on-state V_GS = -4.5 V; I_D = -1.2 A; T_j = 25 °C
resistance
-
350 447 mΩ
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
drain 6 cm².
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