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PMWD30UN Datasheet, PDF (1/12 Pages) NXP Semiconductors – Dual uTrenchMOS ultra low level FET | |||
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PMWD30UN
Dual µTrenchMOS⢠ultra low level FET
M3D647
Rev. 01 â 22 January 2003
Product data
1. Product proï¬le
1.1 Description
Dual N-channel enhancement mode ï¬eld-effect transistor in a plastic package using
TrenchMOS⢠technology.
Product availability:
PMWD30UN in SOT530-1 (TSSOP8).
1.2 Features
s Surface mounting package
s Very low threshold
s Low proï¬le
s Fast switching.
1.3 Applications
s Portable appliances
s Battery management
s PCMCIA cards
s Load switching.
1.4 Quick reference data
s VDS ⤠30 V
s Ptot ⤠2.3 W
s ID ⤠5 A
s RDSon ⤠33 mâ¦
2. Pinning information
Table 1:
Pin
1
2,3
4
5
6,7
8
Pinning - SOT530-1, simpliï¬ed outline and symbol
Description
Simpliï¬ed outline
drain1 (d1)
source1 (s1)
8
5
gate1 (g1)
gate2 (g2)
source2 (s2)
drain2 (d2)
1
Top view
4
MBK885
SOT530-1
Symbol
d1
d2
s1 g1 s2 g2
MSD901
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