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PMWD26UN Datasheet, PDF (1/12 Pages) NXP Semiconductors – Dual N-channel uTrenchMOS ultra low level FET | |||
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PMWD26UN
Dual N-channel µTrenchMOS ultra low level FET
Rev. 02 â 19 May 2005
Product data sheet
1. Product proï¬le
1.1 General description
Dual N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package
using TrenchMOS technology.
1.2 Features
s Surface-mounted package
s Very low threshold voltage
s Low proï¬le
s Fast switching
1.3 Applications
s Portable appliances
s Battery management
s PCMCIA cards
s Load switching
1.4 Quick reference data
s VDS ⤠20 V
s Ptot ⤠3.1 W
s ID ⤠7.8 A
s RDSon ⤠30 mâ¦
2. Pinning information
Table 1: Pinning
Pin
Description
1
drain1 (D1)
2, 3
source1 (S1)
4
gate1 (G1)
5
gate2 (G2)
6, 7
source2 (S2)
8
drain2 (D2)
Simpliï¬ed outline
8
5
Symbol
D1
D2
1
4
SOT530-1 ((TSSOP8)
S1 G1 S2 G2
msd901
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