PMWD19UN Datasheet, PDF (1/12 Pages) NXP Semiconductors – DUAL uTRENCHMOS ULTRA LOW LEVEL FET

PMWD19UN
Dual µTrenchMOS™ ultra low level FET
M3D647
Rev. 01 — 20 December 2002
Product data
1. Product profile
1.1 Description
Dual N-channel enhancement mode field-effect transistor in a plastic package using
TrenchMOS™ technology.
Product availability:
PMWD19UN in SOT530-1 (TSSOP8).
1.2 Features
s Surface mounting package
s Very low threshold
s Low profile
s Fast switching.
1.3 Applications
s Portable appliances
s Battery management
s PCMCIA cards
s Load switching.
1.4 Quick reference data
s V_DS ≤ 30 V
s P_tot ≤ 2.3 W
s I_D ≤ 5.6 A
s R_DSon ≤ 23 mΩ.
2. Pinning information
Table 1:
Pin
1
2,3
4
5
6,7
8
Pinning - SOT530-1, simplified outline and symbol
Description
Simplified outline
drain1 (d1)
source1 (s1)
8
5
gate1 (g1)
gate2 (g2)
source2 (s2)
drain2 (d2)
1
Top view
4
MBK885
SOT530-1
Symbol
d1
d2
s1 g1 s2 g2
MSD901