PMWD16UN Datasheet, PDF (1/12 Pages) NXP Semiconductors – Dual N-channel uTrenchMOS ultra low level FET

PMWD16UN
Dual N-channel µTrenchMOS™ ultra low level FET
Rev. 02 — 24 March 2005
Product data sheet
1. Product profile
1.1 General description
Dual N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package
using TrenchMOS™ technology.
1.2 Features
s Surface mounting package
s Very low threshold voltage
s Low profile
s Fast switching
1.3 Applications
s Portable appliances
s Battery management
s PCMCIA cards
s Load switching
1.4 Quick reference data
s V_DS ≤ 20 V
s P_tot ≤ 3.1 W
s I_D ≤ 9.9 A
s R_DSon ≤ 19 mΩ
2. Pinning information
Table 1: Pinning
Pin
Description
1
drain1 (D1)
2, 3
source1 (S1)
4
gate1 (G1)
5
gate2 (G2)
6, 7
source2 (S2)
8
drain2 (D2)
Simplified outline
8
5
1
4
SOT530-1 (TSSOP8)
Symbol
D₁
D₂
S₁ G₁ S₂ G₂
msd901