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PMV75UP_15 Datasheet, PDF (1/15 Pages) NXP Semiconductors – 20 V, P-channel Trench MOSFET | |||
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PMV75UP
20 V, P-channel Trench MOSFET
25 April 2014
Product data sheet
1. General description
P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23
(TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET
technology.
2. Features and benefits
⢠Trench MOSFET technology
⢠Low threshold voltage
⢠Very fast switching
⢠Enhanced power dissipation capability: Ptot = 1000 mW
3. Applications
⢠LED driver
⢠Power management
⢠High-side loadswitch
⢠Switching circuits
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
Min Typ Max Unit
VDS
drain-source voltage Tj = 25 °C
-
-
-20 V
VGS
gate-source voltage
-12 -
12
V
ID
drain current
VGS = -4.5 V; Tamb = 25 °C; t ⤠5 s
[1]
-
-
-3.2 A
Static characteristics
RDSon
drain-source on-state VGS = -4.5 V; ID = -2.5 A; Tj = 25 °C
resistance
-
77
102 mΩ
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
drain 6 cm2.
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