PMV65XP Datasheet, PDF (1/14 Pages) NXP Semiconductors – P-channel TrenchMOS extremely low level FET

PMV65XP
20 V, single P-channel Trench MOSFET
12 February 2013
Product data sheet
1. General description
P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23
(TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET
technology.
2. Features and benefits
• Low threshold voltage
• Low on-state resistance
• Trench MOSFET technology
3. Applications
• Low power DC-to-DC converters
• Load switching
• Battery management
• Battery powered portable equipment
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
V_DS
drain-source voltage
V_GS
gate-source voltage
I_D
drain current
Static characteristics
R_DSon
drain-source on-state
resistance
Conditions
T_j = 25 °C
V_GS = -4.5 V; T_sp = 25 °C
V_GS = -4.5 V; I_D = -2.8 A; T_j = 25 °C
Min Typ Max Unit
-
-
-20 V
-12 -
12
V
-
-
-4.3 A
-
58
74
mΩ
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