PMV50XP_15 Datasheet, PDF (1/15 Pages) NXP Semiconductors – 20 V, P-channel Trench MOSFET

PMV50XP
20 V, P-channel Trench MOSFET
19 November 2014
Product data sheet
1. General description
P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23
(TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET
technology.
2. Features and benefits
• Low threshold voltage
• Low on-state resistance
• Trench MOSFET technology
• Enhanced power dissipation capability of 1096 mW
3. Applications
• Relay driver
• High-speed line driver
• High-side loadswitch
• Switching circuits
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
Min Typ Max Unit
V_DS
drain-source voltage T_j = 25 °C
-
-
-20 V
V_GS
gate-source voltage
-12 -
12
V
I_D
drain current
V_GS = -4.5 V; T_amb = 25 °C; t ≤ 5 s
[1]
-
-
-4.4 A
Static characteristics
R_DSon
drain-source on-state V_GS = -4.5 V; I_D = -3.6 A; T_j = 25 °C
resistance
-
48
60
mΩ
[1] _{Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm}²_.
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