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PMV32UP Datasheet, PDF (1/15 Pages) NXP Semiconductors – 20 V, 4 A P-channel Trench MOSFET | |||
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PMV32UP
20 V, 4 A P-channel Trench MOSFET
Rev. 1 â 11 March 2011
Product data sheet
1. Product profile
1.1 General description
P-channel enhancement mode Field-Effect Transistor (FET) in a small
SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench
MOSFET technology.
1.2 Features and benefits
ï® 1.8 V drain-source on-state resistance
rated
ï® Very fast switching
ï® Trench MOSFET technology
1.3 Applications
ï® Relay driver
ï® High-speed line driver
ï® High-side loadswitch
ï® Switching circuits
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Conditions
VDS
drain-source
Tj = 25 °C
voltage
VGS
gate-source
voltage
ID
drain current
Static characteristics
VGS = -4.5 V; Tamb = 25 °C
RDSon
drain-source
on-state
resistance
VGS = -4.5 V; ID = -2.4 A;
Tj = 25 °C
Min Typ Max Unit
-
-
-20 V
-8 -
8
V
[1]
-
-
-4 A
-
32 36 mâ¦
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
drain 6 cm2.
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