PMV22EN Datasheet, PDF (1/14 Pages) NXP Semiconductors – 30 V, 5.2 A N-channel Trench MOSFET

PMV22EN
30 V, 5.2 A N-channel Trench MOSFET
Rev. 1 — 30 March 2011
Product data sheet
1. Product profile
1.1 General description
N-channel enhancement mode Field-Effect Transistor (FET) in a small
SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using
Trench MOSFET technology.
1.2 Features and benefits
 Logic-level compatible
 Very fast switching
 Trench MOSFET technology
1.3 Applications
 Relay driver
 High-speed line driver
 Low-side loadswitch
 Switching circuits
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Conditions
V_DS
drain-source
T_amb = 25 °C
voltage
V_GS
gate-source
voltage
I_D
drain current
V_GS = 10 V; T_amb = 25 °C
[1]
Static characteristics
R_DSon
drain-source
on-state
resistance
V_GS = 10 V; I_D = 5.2 A; pulsed;
t_p ≤ 300 µs; δ ≤ 0.01; T_j = 25 °C
Min Typ Max Unit
-
-
30 V
-20 -
20 V
-
-
5.2 A
-
17 22 mΩ
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
drain 6 cm².