PMV20XNE_15 Datasheet, PDF (1/15 Pages) NXP Semiconductors – 30 V, N-channel Trench MOSFET

PMV20XNE
30 V, N-channel Trench MOSFET
10 November 2014
Product data sheet
1. General description
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23
(TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET
technology.
2. Features and benefits
• Trench MOSFET technology
• Low threshold voltage
• Enhanced power dissipation capability of 1200 mW
• ElectroStatic Discharge (ESD) protection: 2 kV HBM
3. Applications
• Relay driver
• High-speed line driver
• Low-side load switch
• Switching circuits
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
V_DS
drain-source voltage
V_GS
gate-source voltage
I_D
drain current
Static characteristics
R_DSon
drain-source on-state
resistance
Conditions
T_j = 25 °C
V_GS = 4.5 V; T_amb = 25 °C; t ≤ 5 s
V_GS = 4.5 V; I_D = 5.7 A; T_j = 25 °C
Min Typ Max Unit
-
-
30
V
-12 -
12
V
[1]
-
-
7.2 A
-
19
23
mΩ
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
drain 6 cm².
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