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PMV20EN_15 Datasheet, PDF (1/15 Pages) NXP Semiconductors – 30 V, N-channel Trench MOSFET | |||
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PMV20EN
30 V, N-channel Trench MOSFET
5 June 2014
Product data sheet
1. General description
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23
(TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET
technology.
2. Features and benefits
⢠Logic level compatible
⢠Very fast switching
⢠Trench MOSFET technology
⢠Enhanced power dissipation capability of 1200 mW
3. Applications
⢠Relay driver
⢠High-speed line driver
⢠Low-side load switch
⢠Switching circuits
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
VDS
drain-source voltage
VGS
gate-source voltage
ID
drain current
Static characteristics
RDSon
drain-source on-state
resistance
Conditions
Tj = 25 °C
VGS = 10 V; Tamb = 25 °C; t ⤠5 s
VGS = 10 V; ID = 6 A; Tj = 25 °C
Min Typ Max Unit
-
-
30
V
-20 -
20
V
[1]
-
-
7.6 A
-
17
21
mΩ
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
drain 6 cm2.
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