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PMV130ENEA_15 Datasheet, PDF (1/16 Pages) NXP Semiconductors – 40 V, N-channel Trench MOSFET | |||
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PMV130ENEA
40 V, N-channel Trench MOSFET
12 June 2014
Product data sheet
1. General description
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23
(TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET
technology.
2. Features and benefits
⢠Logic-level compatible
⢠Very fast switching
⢠Trench MOSFET technology
⢠1 kV ESD protected
⢠AEC-Q101 qualified
3. Applications
⢠Relay driver
⢠High-speed line driver
⢠Low-side load switch
⢠Switching circuits
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
VDS
drain-source voltage
VGS
gate-source voltage
ID
drain current
Static characteristics
RDSon
drain-source on-state
resistance
Conditions
Tj = 25 °C
VGS = 10 V; Tamb = 25 °C
VGS = 10 V; ID = 1.5 A; Tj = 25 °C
Min Typ Max Unit
-
-
40
V
-20 -
20
V
[1]
-
-
2.1 A
-
95
120 mΩ
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
drain 6 cm2.
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