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PMT21EN Datasheet, PDF (1/15 Pages) NXP Semiconductors – 30 V, 7.4 A N-channel Trench MOSFET | |||
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PMT21EN
30 V, 7.4 A N-channel Trench MOSFET
Rev. 1 â 30 August 2011
Product data sheet
1. Product profile
1.1 General description
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT223 (SC-73)
small Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
1.2 Features and benefits
ï® Logic-level compatible
ï® Very fast switching
ï® Trench MOSFET technology
1.3 Applications
ï® Relay driver
ï® High-speed line driver
ï® Low-side loadswitch
ï® Switching circuits
1.4 Quick reference data
Table 1. Quick reference data
Symbol
Parameter
VDS
drain-source voltage
VGS
gate-source voltage
ID
drain current
Static characteristics
RDSon
drain-source on-state
resistance
Conditions
Tj = 25 °C
VGS = 10 V; Tamb = 25 °C
VGS = 10 V; ID = 7.4 A; Tj = 25 °C
Min Typ Max Unit
-
-
30 V
-20 -
20 V
[1]
-
-
7.4 A
-
18
21
mâ¦
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2.
2. Pinning information
Table 2.
Pin
1
2
3
4
Pinning information
Symbol Description
G
gate
D
drain
S
source
D
drain
Simplified outline
4
123
SOT223 (SC-73)
Graphic symbol
D
G
S
017aaa253
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