PMPB43XPE_15 Datasheet, PDF (1/15 Pages) NXP Semiconductors – 20 V, single P-channel Trench MOSFET

PMPB43XPE
20 V, single P-channel Trench MOSFET
26 November 2014
Product data sheet
1. General description
P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power
DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using
Trench MOSFET technology.
2. Features and benefits
• 1 kV ESD protected
• Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm
• Exposed drain pad for excellent thermal conduction
• Tin-plated 100 % solderable side pads for optical solder inspection
3. Applications
• Charging switch for portable devices
• DC-to-DC converters
• Power management in battery-driven portable devices
• Hard disk and computing power management
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
V_DS
drain-source voltage
V_GS
gate-source voltage
I_D
drain current
Static characteristics
R_DSon
drain-source on-state
resistance
Conditions
T_j = 25 °C
V_GS = -4.5 V; T_amb = 25 °C
V_GS = -4.5 V; I_D = -5 A; T_j = 25 °C
Min Typ Max Unit
-
-
-20 V
-12 -
12
V
[1]
-
-
-5
A
-
39
48
mΩ
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
drain 6 cm².
Scan or click this QR code to view the latest information for this product