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PMPB27EP_15 Datasheet, PDF (1/14 Pages) NXP Semiconductors – 30 V, single P-channel Trench MOSFET | |||
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PMPB27EP
30 V, single P-channel Trench MOSFET
10 September 2012
Product data sheet
1. Product profile
1.1 General description
P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power
DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using
Trench MOSFET technology.
1.2 Features and benefits
⢠Trench MOSFET technology
⢠Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm
⢠Exposed drain pad for excellent thermal conduction
⢠Tin-plated 100 % solderable side pads for optical solder inspection
1.3 Applications
⢠Charging switch for portable devices
⢠DC-to-DC converters
⢠Power management in battery-driven portable devices
⢠Hard disk and computing power management
1.4 Quick reference data
Table 1. Quick reference data
Symbol
Parameter
VDS
drain-source voltage
VGS
gate-source voltage
ID
drain current
Static characteristics
RDSon
drain-source on-state
resistance
Conditions
Tj = 25 °C
VGS = -10 V; Tamb = 25 °C; t ⤠5 s
VGS = -10 V; ID = -6.1 A; Tj = 25 °C
Min Typ Max Unit
-
-
-30 V
-20 -
20
V
[1]
-
-
-8.8 A
-
24
29
mΩ
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
drain 6 cm2.
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