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PMPB19XP_15 Datasheet, PDF (1/14 Pages) NXP Semiconductors – PMPB19XP_15 | |||
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PMPB19XP
20 V, single P-channel Trench MOSFET
20 September 2012
Product data sheet
1. Product profile
1.1 General description
P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power
DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using
Trench MOSFET technology.
1.2 Features and benefits
⢠Trench MOSFET technology
⢠Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm
⢠Exposed drain pad for excellent thermal conduction
⢠Tin-plated 100 % solderable side pads for optical solder inspection
1.3 Applications
⢠Charging switch for portable devices
⢠DC-to-DC converters
⢠Power management in battery-driven portable devices
⢠Hard disk and computing power management
1.4 Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
Min Typ Max Unit
VDS
drain-source voltage Tj = 25 °C
-
-
-20 V
VGS
gate-source voltage
-12 -
12
V
ID
drain current
VGS = -4.5 V; Tamb = 25 °C; t ⤠5 s
[1]
-
-
-10.3 A
Static characteristics
RDSon
drain-source on-state VGS = -4.5 V; ID = -7.2 A; Tj = 25 °C
resistance
-
19
22.5 mΩ
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
drain 6 cm2.
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