PMN50UPE_15 Datasheet, PDF (1/13 Pages) NXP Semiconductors – 20 V, single P-channel Trench MOSFET

PMN50UPE
20 V, single P-channel Trench MOSFET
20 July 2012
Product data sheet
1. Product profile
1.1 General description
P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74)
Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
1.2 Features and benefits
• 3 kV ESD protected
• Trench MOSFET technology
• Low threshold voltage
1.3 Applications
• Relay driver
• High-side loadswitch
• Switching circuits
1.4 Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
Min Typ Max Unit
V_DS
drain-source voltage T_j = 25 °C
-
-
-20 V
V_GS
gate-source voltage
-8
-
8
V
I_D
drain current
V_GS = -4.5 V; T_amb = 25 °C; t ≤ 5 s
[1]
-
-
-4
A
Static characteristics
R_DSon
drain-source on-state V_GS = -4.5 V; I_D = -3.6 A; T_j = 25 °C
resistance
-
50
66
mΩ
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
drain 6 cm².
Scan or click this QR code to view the latest information for this product