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PMN40UPEA_15 Datasheet, PDF (1/16 Pages) NXP Semiconductors – 20 V, single P-channel Trench MOSFET | |||
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PMN40UPEA
20 V, single P-channel Trench MOSFET
19 June 2014
Product data sheet
1. General description
P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74)
Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
2. Features and benefits
⢠Low threshold voltage
⢠Fast switching
⢠Trench MOSFET technology
⢠4 kV ESD protection
⢠AEC-Q101 qualified
3. Applications
⢠Relay driver
⢠High-speed line driver
⢠High-side loadswitch
⢠Switching circuits
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
VDS
drain-source voltage
VGS
gate-source voltage
ID
drain current
Static characteristics
RDSon
drain-source on-state
resistance
Conditions
Tj = 25 °C
VGS = -4.5 V; Tamb = 25 °C; t ⤠5 s
VGS = -4.5 V; ID = -3 A; Tj = 25 °C
Min Typ Max Unit
-
-
-20 V
-8
-
8
V
[1]
-
-
-6
A
-
37
43
mΩ
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
drain 6 cm2.
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