PMN23UN Datasheet, PDF (1/12 Pages) NXP Semiconductors – UTrenchMOS ultra low level FET

PMN23UN
µTrenchMOS™ ultra low level FET
Rev. 01 — 16 June 2004
M3D302
Product data
1. Product profile
1.1 Description
N-channel enhancement mode field-effect transistor in a plastic package using
TrenchMOS™ technology.
1.2 Features
s TrenchMOS™ technology
s Very fast switching
s Low threshold voltage
s Surface mounted package.
1.3 Applications
s Battery powered motor control
s High-speed switch in set top box
power supplies
s Load switch in notebook computers
s Driver FET in DC-to-DC converters.
1.4 Quick reference data
s V_DS ≤ 20 V
s P_tot ≤ 1.75 W
s I_D ≤ 6.3 A
s R_DSon ≤ 28 mΩ.
2. Pinning information
Table 1:
Pin
1,2,5,6
3
4
Pinning - SOT457 (TSOP6), simplified outline and symbol
Description
Simplified outline
drain (d)
gate (g)
6
5
4
source (s)
Symbol
1
2
3
Top view
MBK092
SOT457 (TSOP6)
d
g
mbb076 s