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PML260SN Datasheet, PDF (1/12 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET
PML260SN
N-channel TrenchMOS standard level FET
Rev. 02 — 29 May 2006
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a
surface-mounted plastic package using TrenchMOS technology.
1.2 Features
I Standard level threshold
I Very low thermal impedance
I Low profile and small footprint
I Low on-state resistance
1.3 Applications
I Primary side switching
I Portable appliances
I DC-to-DC converters
1.4 Quick reference data
I VDS ≤ 200 V
I RDSon ≤ 294 mΩ
I ID ≤ 8.8 A
I QGD = 4.2 nC (typ)
2. Pinning information
Table 1.
Pin
1, 2, 3
4
5, 6, 7, 8
Pinning
Description
source (S)
gate (G)
drain (D)
Simplified outline
8765
1234
Transparent
top view
SOT873-1 (HVSON8)
Symbol
D
G
mbb076 S